Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Tip pachet
H2PAK
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
315W
Temperatura maxima de lucru
175°C
Lungime
15.25mm
Standards/Approvals
No
Latime
10.4mm
Inaltime
4.8mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 10,12
€ 5,06 Buc. (Intr-un pachet de 2) (fara TVA)
€ 12,25
€ 6,123 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 10,12
€ 5,06 Buc. (Intr-un pachet de 2) (fara TVA)
€ 12,25
€ 6,123 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 18 | € 5,06 | € 10,12 |
| 20 - 98 | € 4,80 | € 9,60 |
| 100 - 198 | € 4,60 | € 9,20 |
| 200+ | € 3,95 | € 7,90 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Tip pachet
H2PAK
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
315W
Temperatura maxima de lucru
175°C
Lungime
15.25mm
Standards/Approvals
No
Latime
10.4mm
Inaltime
4.8mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.