Tranzistoare MOSFET
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Se afiseaza 1-20 din 12455 produse
P.O.A.
Verifica stocul
10
Infineon
-
MOSFET
Type N
-
270A
-
-
-
40V
DirectFET
-
DirectFET
-
Surface
-
-
1mΩ
-
-
-
-
-
-
3.8W
-
220nC
1.3V
±20 V
-55°C
-
-
175°C
-
-
-
-
RoHS, Lead-Free
-
-
-
-
-
-
-
-
-
No
-
-
P.O.A.
Verifica stocul
1
Infineon
-
MOSFET
Type N
-
270A
-
-
-
40V
DirectFET
-
DirectFET
-
Surface
-
-
1mΩ
-
-
-
-
-
-
3.8W
-
220nC
1.3V
±20 V
-55°C
-
-
175°C
-
-
-
-
RoHS, Lead-Free
-
-
-
-
-
-
-
-
-
No
-
-
Infineon
-
MOSFET
Type N
-
1.9A
-
-
-
55V
SOT-223
-
HEXFET Fifth Generation
-
Surface
-
-
0.16Ω
-
-
-
-
-
-
2.1W
-
7nC
1V
20 V
-55°C
-
-
150°C
-
-
-
-
Lead-Free
-
-
-
-
-
-
-
-
-
No
-
304-40-532
P.O.A.
Verifica stocul
10
Infineon
-
MOSFET
Type N
-
1.9A
-
-
-
55V
SOT-223
-
HEXFET Fifth Generation
-
Surface
-
-
0.16Ω
-
-
-
-
-
-
2.1W
-
7nC
1V
20 V
-55°C
-
-
150°C
-
-
-
-
Lead-Free
-
-
-
-
-
-
-
-
-
No
-
-
Infineon
-
MOSFET
Type N
-
43A
-
-
-
150V
TO-263
-
HEXFET
-
Surface
3
-
0.042Ω
-
-
-
-
-
-
200W
-
20nC
1.3V
20 V
-55°C
-
-
175°C
-
-
-
-
EIA 418
-
-
-
-
-
-
-
-
-
No
-
-
P.O.A.
Verifica stocul
5
Infineon
-
MOSFET
Type N
-
43A
-
-
-
150V
TO-263
-
HEXFET
-
Surface
3
-
0.042Ω
-
-
-
-
-
-
200W
-
20nC
1.3V
20 V
-55°C
-
-
175°C
-
-
-
-
EIA 418
-
-
-
-
-
-
-
-
-
No
-
-
Infineon
-
IR MOSFET
Type P
-
-4A
-
-
-
-30V
SO-8
-
HEXFET
-
Through Hole
8
-
160mΩ
-
-
Dual
-
-
-
-
-
16.7nC
-
±20 V
-55°C
-
-
175°C
5mm
1.75mm
-
4 mm
RoHS
-
-
-
-
-
-
-
-
-
No
-
304-40-518
P.O.A.
Verifica stocul
10
Infineon
-
IR MOSFET
Type P
-
-4A
-
-
-
-30V
SO-8
-
HEXFET
-
Through Hole
8
-
160mΩ
-
-
Dual
-
-
-
-
-
16.7nC
-
±20 V
-55°C
-
-
175°C
5mm
1.75mm
-
4 mm
RoHS
-
-
-
-
-
-
-
-
-
No
-
-
Infineon
-
MOSFET
Type P
-
-21A
-
-
-
-30V
PQFN
-
HEXFET
-
Surface
8
-
3.7mΩ
-
-
-
-
-
-
3.1W
-
58nC
-1.2V
20 V
-55°C
-
-
150°C
5mm
0.39mm
-
6 mm
RoHS
-
-
-
-
-
-
-
-
-
No
-
-
P.O.A.
Verifica stocul
5
Infineon
-
MOSFET
Type P
-
-21A
-
-
-
-30V
PQFN
-
HEXFET
-
Surface
8
-
3.7mΩ
-
-
-
-
-
-
3.1W
-
58nC
-1.2V
20 V
-55°C
-
-
150°C
5mm
0.39mm
-
6 mm
RoHS
-
-
-
-
-
-
-
-
-
No
-
-
Infineon
-
MOSFET
Type P
-
5A
-
-
-
-
SO-8
-
HEXFET
-
Surface
8
-
0.13Ω
-
-
-
-
-
-
-
-
27nC
-1.2V
20 V
-
-
-
-
5mm
1.75mm
-
4 mm
RoHS
-
-
-
-
-
-
-
-
-
No
-
304-40-517
P.O.A.
Verifica stocul
10
Infineon
-
MOSFET
Type P
-
5A
-
-
-
-
SO-8
-
HEXFET
-
Surface
8
-
0.13Ω
-
-
-
-
-
-
-
-
27nC
-1.2V
20 V
-
-
-
-
5mm
1.75mm
-
4 mm
RoHS
-
-
-
-
-
-
-
-
-
No
-
-
P.O.A.
Verifica stocul
10
P.O.A.
Verifica stocul
5
Infineon
-
MOSFET
Type P, Type N
-
6.8A
-
-
-
30V
SO-8
-
IRF
-
Surface
8
-
-
-
-
-
-
-
-
2W
-
8.1nC
1.2V
±20 V
-55°C
-
-
150°C
-
-
-
-
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
-
P.O.A.
Verifica stocul
10
Infineon
-
MOSFET
Type P, Type N
-
6.8A
-
-
-
30V
SO-8
-
IRF
-
Surface
8
-
-
-
-
-
-
-
-
2W
-
8.1nC
1.2V
±20 V
-55°C
-
-
150°C
-
-
-
-
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
-
Infineon
-
MOSFET
Type P
-
10A
-
-
-
30V
SO-8
-
IRF
-
Surface
8
-
0.035Ω
-
-
-
-
-
-
2.5W
-
61nC
1V
20 V
-55°C
-
-
150°C
5mm
1.75mm
-
4 mm
RoHS
-
-
-
-
-
-
-
-
-
-
-
-
P.O.A.
Verifica stocul
5
Infineon
-
MOSFET
Type P
-
10A
-
-
-
30V
SO-8
-
IRF
-
Surface
8
-
0.035Ω
-
-
-
-
-
-
2.5W
-
61nC
1V
20 V
-55°C
-
-
150°C
5mm
1.75mm
-
4 mm
RoHS
-
-
-
-
-
-
-
-
-
-
-
-
Infineon
-
MOSFET
Type P
-
13A
-
-
-
-12V
SO-8
-
IRF7410
-
Surface
8
-
7mΩ
-
-
-
-
-
-
2.5W
-
91nC
-1.2V
±8 V
-55°C
-
-
150°C
-
-
-
-
RoHS
-
-
-
-
-
-
-
-
-
No
-
-
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