Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.92mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.93mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 6,40
€ 0,32 Buc. (Intr-un pachet de 20) (fara TVA)
€ 7,62
€ 0,381 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
€ 6,40
€ 0,32 Buc. (Intr-un pachet de 20) (fara TVA)
€ 7,62
€ 0,381 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
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Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 180 | € 0,32 | € 6,40 |
200 - 480 | € 0,28 | € 5,60 |
500 - 980 | € 0,24 | € 4,80 |
1000 - 1980 | € 0,21 | € 4,20 |
2000+ | € 0,19 | € 3,80 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.92mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.93mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.