Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
350 mW
Maximum Gate Source Voltage
-18 V, +18 V
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.03mm
Latime
1.73mm
Serie
STripFET
Temperatura minima de lucru
-55 °C
Inaltime
1.2mm
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P.O.A.
Standard
50
P.O.A.
Standard
50
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
350 mW
Maximum Gate Source Voltage
-18 V, +18 V
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.03mm
Latime
1.73mm
Serie
STripFET
Temperatura minima de lucru
-55 °C
Inaltime
1.2mm