Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Latime
1.4mm
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 2,00
€ 0,08 Buc. (Intr-un pachet de 25) (fara TVA)
€ 2,42
€ 0,097 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 2,00
€ 0,08 Buc. (Intr-un pachet de 25) (fara TVA)
€ 2,42
€ 0,097 Buc. (Intr-un pachet de 25) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 25 - 125 | € 0,08 | € 2,00 |
| 150 - 725 | € 0,07 | € 1,75 |
| 750+ | € 0,06 | € 1,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Latime
1.4mm
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Tara de origine
China
Detalii produs


