Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Tip pachet
TO-263
Series
STB11NM80
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Power Dissipation Pd
150W
Frecventa minima de auto-rezonanta
-65°C
Forward Voltage Vf
0.86V
Temperatura maxima de lucru
150°C
Lungime
10.4mm
Inaltime
4.37mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 3.540,00
€ 3,54 Buc. (Pe o rola de 1000) (fara TVA)
€ 4.283,40
€ 4,283 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 3.540,00
€ 3,54 Buc. (Pe o rola de 1000) (fara TVA)
€ 4.283,40
€ 4,283 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Tip pachet
TO-263
Series
STB11NM80
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Power Dissipation Pd
150W
Frecventa minima de auto-rezonanta
-65°C
Forward Voltage Vf
0.86V
Temperatura maxima de lucru
150°C
Lungime
10.4mm
Inaltime
4.37mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
