Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
900 V
Tip pachet
TO-247
Serie
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
72 nC @ 10 V
Latime
5.15mm
Inaltime
20.15mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 3,10
€ 3,10 Buc. (fara TVA)
€ 3,75
€ 3,75 Buc. (cu TVA)
Standard
1
€ 3,10
€ 3,10 Buc. (fara TVA)
€ 3,75
€ 3,75 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 3,10 |
| 10 - 24 | € 2,76 |
| 25 - 99 | € 2,60 |
| 100 - 499 | € 2,05 |
| 500+ | € 1,80 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
900 V
Tip pachet
TO-247
Serie
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
72 nC @ 10 V
Latime
5.15mm
Inaltime
20.15mm
Temperatura minima de lucru
-55 °C
Detalii produs


