Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Tip pachet
TO-247
Series
STW
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Lungime
40.92mm
Inaltime
5.1mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 110,30
€ 11,03 Each (Supplied in a Tray) (fara TVA)
€ 133,46
€ 13,35 Each (Supplied in a Tray) (cu TVA)
Impachetare pentru productie (Tava)
10
€ 110,30
€ 11,03 Each (Supplied in a Tray) (fara TVA)
€ 133,46
€ 13,35 Each (Supplied in a Tray) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tava)
10
| Cantitate | Pret unitar |
|---|---|
| 10 - 119 | € 11,03 |
| 120+ | € 9,74 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Tip pachet
TO-247
Series
STW
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Lungime
40.92mm
Inaltime
5.1mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
