Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
72A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-247-4
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance Rds
39mΩ
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
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ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
P.O.A.
Each (In a Tube of 30) (fara TVA)
30
P.O.A.
Each (In a Tube of 30) (fara TVA)
Informatii despre stoc temporar indisponibile
30
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
72A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-247-4
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance Rds
39mΩ
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
