Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-247
Series
DM6
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Gate Source Voltage Vgs
25V
Temperatura maxima de lucru
175°C
Inaltime
20.15mm
Latime
5.15mm
Lungime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 161,40
€ 5,38 Each (In a Tube of 30) (fara TVA)
€ 195,29
€ 6,51 Each (In a Tube of 30) (cu TVA)
30
€ 161,40
€ 5,38 Each (In a Tube of 30) (fara TVA)
€ 195,29
€ 6,51 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-247
Series
DM6
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Gate Source Voltage Vgs
25V
Temperatura maxima de lucru
175°C
Inaltime
20.15mm
Latime
5.15mm
Lungime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
