Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-247
Series
MDmesh DM2
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
79mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
70nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
20.15mm
Lungime
15.75mm
Standards/Approvals
No
Latime
5.15mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
Informatii despre stoc temporar indisponibile
€ 7,12
€ 7,12 Each (Supplied in a Tube) (fara TVA)
€ 8,62
€ 8,62 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
€ 7,12
€ 7,12 Each (Supplied in a Tube) (fara TVA)
€ 8,62
€ 8,62 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-247
Series
MDmesh DM2
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
79mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
70nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
20.15mm
Lungime
15.75mm
Standards/Approvals
No
Latime
5.15mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.