Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SO-8
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
2.5W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
16V
Temperatura maxima de lucru
150°C
Latime
4mm
Inaltime
1.65mm
Lungime
5mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Informatii despre stoc temporar indisponibile
€ 1.500,00
€ 0,60 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.815,00
€ 0,726 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.500,00
€ 0,60 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.815,00
€ 0,726 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SO-8
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
2.5W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
16V
Temperatura maxima de lucru
150°C
Latime
4mm
Inaltime
1.65mm
Lungime
5mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.