
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOIC
Series
STripFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Frecventa minima de auto-rezonanta
150°C
Typical Gate Charge Qg @ Vgs
15nC
Temperatura maxima de lucru
-55°C
Transistor Configuration
Isolated
Inaltime
1.25mm
Lungime
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Tara de origine
China
Detalii Produs
Informatii despre stoc temporar indisponibile
€ 12,95
€ 2,59 Buc. (Intr-un pachet de 5) (fara TVA)
€ 15,67
€ 3,134 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 12,95
€ 2,59 Buc. (Intr-un pachet de 5) (fara TVA)
€ 15,67
€ 3,134 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 5 | € 2,59 | € 12,95 |
| 10 - 20 | € 2,26 | € 11,30 |
| 25 - 95 | € 2,13 | € 10,65 |
| 100 - 495 | € 1,65 | € 8,25 |
| 500+ | € 1,38 | € 6,90 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOIC
Series
STripFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Frecventa minima de auto-rezonanta
150°C
Typical Gate Charge Qg @ Vgs
15nC
Temperatura maxima de lucru
-55°C
Transistor Configuration
Isolated
Inaltime
1.25mm
Lungime
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Tara de origine
China
Detalii Produs