Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Tip pachet
SOT-23
Series
STripFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
350mW
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Forward Voltage Vf
-1.1V
Temperatura maxima de lucru
150°C
Inaltime
1.3mm
Lungime
3.04mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 18,50
€ 0,37 Buc. (Intr-un pachet de 50) (fara TVA)
€ 22,38
€ 0,448 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 18,50
€ 0,37 Buc. (Intr-un pachet de 50) (fara TVA)
€ 22,38
€ 0,448 Buc. (Intr-un pachet de 50) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
50
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 50 - 50 | € 0,37 | € 18,50 |
| 100+ | € 0,34 | € 17,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Tip pachet
SOT-23
Series
STripFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
350mW
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Forward Voltage Vf
-1.1V
Temperatura maxima de lucru
150°C
Inaltime
1.3mm
Lungime
3.04mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


