Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Tip pachet
TO-220
Series
MDmesh K6
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.6Ω
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 24,70
€ 2,47 Each (Supplied in a Tube) (fara TVA)
€ 29,89
€ 2,99 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 24,70
€ 2,47 Each (Supplied in a Tube) (fara TVA)
€ 29,89
€ 2,99 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
10
| Cantitate | Pret unitar |
|---|---|
| 10 - 99 | € 2,47 |
| 100 - 499 | € 2,22 |
| 500+ | € 2,07 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Tip pachet
TO-220
Series
MDmesh K6
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.6Ω
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
