Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-220
Series
STP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
80nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
4.6mm
Lungime
28.9mm
Standards/Approvals
UL
Latime
10.4mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.
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ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 32,05
€ 6,41 Buc. (Intr-un pachet de 5) (fara TVA)
€ 38,78
€ 7,756 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 32,05
€ 6,41 Buc. (Intr-un pachet de 5) (fara TVA)
€ 38,78
€ 7,756 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 6,41 | € 32,05 |
| 50 - 120 | € 5,73 | € 28,65 |
| 125+ | € 4,73 | € 23,65 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-220
Series
STP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
80nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
4.6mm
Lungime
28.9mm
Standards/Approvals
UL
Latime
10.4mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
