Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-220
Series
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
30W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
44.5nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Inaltime
9.3mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 56,50
€ 1,13 Each (Supplied in a Tube) (fara TVA)
€ 68,36
€ 1,367 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
50
€ 56,50
€ 1,13 Each (Supplied in a Tube) (fara TVA)
€ 68,36
€ 1,367 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
50
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 245 | € 1,13 | € 5,65 |
| 250 - 495 | € 0,79 | € 3,95 |
| 500+ | € 0,61 | € 3,05 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-220
Series
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
30W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
44.5nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Inaltime
9.3mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.