Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-LL
Series
STP50N60DM6
Montare
Through Hole
Numar pini
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
4.4mm
Lungime
28.9mm
Standards/Approvals
No
Latime
10mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 185,00
€ 3,70 Each (In a Tube of 50) (fara TVA)
€ 223,85
€ 4,477 Each (In a Tube of 50) (cu TVA)
50
€ 185,00
€ 3,70 Each (In a Tube of 50) (fara TVA)
€ 223,85
€ 4,477 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-LL
Series
STP50N60DM6
Montare
Through Hole
Numar pini
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
4.4mm
Lungime
28.9mm
Standards/Approvals
No
Latime
10mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
