Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
38A
Maximum Drain Source Voltage Vds
60V
Series
STripFET II
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
28mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
32nC
Temperatura minima de lucru
-55°C
Maximum Power Dissipation Pd
80W
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
4.6mm
Lungime
10.4mm
Inaltime
9.15mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 11,40
€ 2,28 Buc. (Intr-un pachet de 5) (fara TVA)
€ 13,79
€ 2,759 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 11,40
€ 2,28 Buc. (Intr-un pachet de 5) (fara TVA)
€ 13,79
€ 2,759 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 2,28 | € 11,40 |
| 50 - 245 | € 1,31 | € 6,55 |
| 250 - 495 | € 0,92 | € 4,60 |
| 500+ | € 0,71 | € 3,55 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
38A
Maximum Drain Source Voltage Vds
60V
Series
STripFET II
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
28mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
32nC
Temperatura minima de lucru
-55°C
Maximum Power Dissipation Pd
80W
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
4.6mm
Lungime
10.4mm
Inaltime
9.15mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.