Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Inaltime
15.75mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 10,50
€ 5,25 Buc. (Intr-un pachet de 2) (fara TVA)
€ 12,70
€ 6,352 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 10,50
€ 5,25 Buc. (Intr-un pachet de 2) (fara TVA)
€ 12,70
€ 6,352 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 18 | € 5,25 | € 10,50 |
| 20 - 98 | € 4,98 | € 9,96 |
| 100 - 198 | € 4,77 | € 9,54 |
| 200+ | € 4,10 | € 8,20 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Inaltime
15.75mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.