Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
195mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
15.75mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 154,00
€ 3,08 Each (In a Tube of 50) (fara TVA)
€ 186,34
€ 3,727 Each (In a Tube of 50) (cu TVA)
50
€ 154,00
€ 3,08 Each (In a Tube of 50) (fara TVA)
€ 186,34
€ 3,727 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 200 | € 3,08 | € 154,00 |
| 250+ | € 2,83 | € 141,50 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
195mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
15.75mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
