Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
550V
Tip pachet
TO-220
Series
MDmesh M5
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
31nC
Temperatura maxima de lucru
150°C
Inaltime
15.75mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informatii despre stoc temporar indisponibile
€ 16,00
€ 1,60 Each (Supplied in a Tube) (fara TVA)
€ 19,36
€ 1,94 Each (Supplied in a Tube) (cu TVA)
10
€ 16,00
€ 1,60 Each (Supplied in a Tube) (fara TVA)
€ 19,36
€ 1,94 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
10
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
550V
Tip pachet
TO-220
Series
MDmesh M5
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
31nC
Temperatura maxima de lucru
150°C
Inaltime
15.75mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.