Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
4.2mΩ
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Informatii despre stoc temporar indisponibile
€ 122,50
€ 2,45 Each (In a Tube of 50) (fara TVA)
€ 148,22
€ 2,964 Each (In a Tube of 50) (cu TVA)
50
€ 122,50
€ 2,45 Each (In a Tube of 50) (fara TVA)
€ 148,22
€ 2,964 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
4.2mΩ
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.2V
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.