Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Informatii despre stoc temporar indisponibile
€ 131,50
€ 2,63 Each (In a Tube of 50) (fara TVA)
€ 159,12
€ 3,182 Each (In a Tube of 50) (cu TVA)
50
€ 131,50
€ 2,63 Each (In a Tube of 50) (fara TVA)
€ 159,12
€ 3,182 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.