Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220
Series
STO67N60DM6
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
59mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
72.5nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
2.2mm
Lungime
11.48mm
Standards/Approvals
No
Latime
9.8mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Intr-un pachet de 2) (fara TVA)
Standard
2
P.O.A.
Buc. (Intr-un pachet de 2) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
2
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220
Series
STO67N60DM6
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
59mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
72.5nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
2.2mm
Lungime
11.48mm
Standards/Approvals
No
Latime
9.8mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
