Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Tip pachet
SOT-223
Series
STN6N60M2
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
6.8mm
Inaltime
1.8mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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ÎNSCRIE-TE GRATIS
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Informatii despre stoc temporar indisponibile
€ 1.160,00
€ 0,29 Buc. (Pe o rola de 4000) (fara TVA)
€ 1.403,60
€ 0,351 Buc. (Pe o rola de 4000) (cu TVA)
4000
€ 1.160,00
€ 0,29 Buc. (Pe o rola de 4000) (fara TVA)
€ 1.403,60
€ 0,351 Buc. (Pe o rola de 4000) (cu TVA)
Informatii despre stoc temporar indisponibile
4000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Tip pachet
SOT-223
Series
STN6N60M2
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
6.8mm
Inaltime
1.8mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
