Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Tip pachet
PowerFLAT
Series
STripFET F7
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Inaltime
0.95mm
Lungime
5.4mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Informatii despre stoc temporar indisponibile
€ 98,00
€ 0,98 Buc. (Livrat pe rola) (fara TVA)
€ 118,58
€ 1,186 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 98,00
€ 0,98 Buc. (Livrat pe rola) (fara TVA)
€ 118,58
€ 1,186 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 100 - 490 | € 0,98 | € 9,80 |
| 500+ | € 0,80 | € 8,00 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Tip pachet
PowerFLAT
Series
STripFET F7
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Inaltime
0.95mm
Lungime
5.4mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.