Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
40V
Tip pachet
PowerFLAT
Series
STripFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
19mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Inaltime
0.95mm
Lungime
6.35mm
Standards/Approvals
No
Latime
5.4mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 13,40
€ 1,34 Buc. (Intr-un pachet de 10) (fara TVA)
€ 16,21
€ 1,621 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 13,40
€ 1,34 Buc. (Intr-un pachet de 10) (fara TVA)
€ 16,21
€ 1,621 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 90 | € 1,34 | € 13,40 |
| 100 - 490 | € 0,88 | € 8,80 |
| 500 - 990 | € 0,69 | € 6,90 |
| 1000 - 2990 | € 0,65 | € 6,50 |
| 3000+ | € 0,62 | € 6,20 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
40V
Tip pachet
PowerFLAT
Series
STripFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
19mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Inaltime
0.95mm
Lungime
6.35mm
Standards/Approvals
No
Latime
5.4mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.