Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Tip pachet
PowerFLAT
Series
STripFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Transistor Configuration
Single
Inaltime
0.95mm
Lungime
6.2mm
Standards/Approvals
No
Latime
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Detalii Produs
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
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Informatii despre stoc temporar indisponibile
€ 11,20
€ 1,12 Buc. (Intr-un pachet de 10) (fara TVA)
€ 13,55
€ 1,355 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 11,20
€ 1,12 Buc. (Intr-un pachet de 10) (fara TVA)
€ 13,55
€ 1,355 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 90 | € 1,12 | € 11,20 |
| 100 - 490 | € 0,73 | € 7,30 |
| 500+ | € 0,60 | € 6,00 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Tip pachet
PowerFLAT
Series
STripFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Transistor Configuration
Single
Inaltime
0.95mm
Lungime
6.2mm
Standards/Approvals
No
Latime
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Detalii Produs
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
