Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Tip pachet
PowerFLAT
Series
MDmesh M5
Montare
Surface
Numar pini
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
950μm
Lungime
8mm
Latime
8mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
5
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
5
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Tip pachet
PowerFLAT
Series
MDmesh M5
Montare
Surface
Numar pini
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
950μm
Lungime
8mm
Latime
8mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.