Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Tip pachet
PowerFLAT
Series
MDmesh M5
Montare
Surface
Numar pini
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
950μm
Lungime
8mm
Latime
8mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Tip pachet
PowerFLAT
Series
MDmesh M5
Montare
Surface
Numar pini
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
950μm
Lungime
8mm
Latime
8mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
