Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Tip pachet
PowerFLAT
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Informatii despre stoc temporar indisponibile
€ 3.960,00
€ 1,32 Buc. (Pe o rola de 3000) (fara TVA)
€ 4.791,60
€ 1,597 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 3.960,00
€ 1,32 Buc. (Pe o rola de 3000) (fara TVA)
€ 4.791,60
€ 1,597 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Tip pachet
PowerFLAT
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.