STMicroelectronics N Channel Mosfet STH4N150 N-Channel Power MOSFET, 2.6 A, 1500 V MOSFET, 3-Pin H2PAK-2 STH4N150-2AG

Marca

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

1500V

Tip pachet

H2PAK-2

Series

STH4N150

Montare

Surface Mount

Numar pini

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

MOSFET

Maximum Power Dissipation Pd

208W

Temperatura minima de lucru

-55°C

Typical Gate Charge Qg @ Vgs

35.1nC

Maximum Gate Source Voltage Vgs

30V

Temperatura maxima de lucru

150°C

Transistor Configuration

N Channel Mosfet

Inaltime

15.8mm

Lungime

10.4mm

Latime

4.7mm

Automotive Standard

AEC-Q101

Tara de origine

China