STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK

Marca

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Tip pachet

H2PAK

Series

STripFET H7

Montare

Surface

Numar pini

7

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Temperatura minima de lucru

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Maximum Gate Source Voltage Vgs

-20, +20V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

315W

Temperatura maxima de lucru

175°C

Inaltime

4.8mm

Lungime

15.25mm

Standards/Approvals

No

Latime

10.4mm

Automotive Standard

No