Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Tip pachet
H2PAK
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Temperatura maxima de lucru
175°C
Lungime
15.8mm
Standards/Approvals
No
Inaltime
4.8mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 8,30
€ 4,15 Buc. (Intr-un pachet de 2) (fara TVA)
€ 10,04
€ 5,022 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 8,30
€ 4,15 Buc. (Intr-un pachet de 2) (fara TVA)
€ 10,04
€ 5,022 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 18 | € 4,15 | € 8,30 |
| 20 - 98 | € 3,97 | € 7,94 |
| 100 - 198 | € 3,84 | € 7,68 |
| 200+ | € 3,56 | € 7,12 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Tip pachet
H2PAK
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Temperatura maxima de lucru
175°C
Lungime
15.8mm
Standards/Approvals
No
Inaltime
4.8mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.