Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Tip pachet
H2PAK-2
Series
STH200
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
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ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 5,70
€ 5,70 Buc. (fara TVA)
€ 6,90
€ 6,90 Buc. (cu TVA)
Standard
1
€ 5,70
€ 5,70 Buc. (fara TVA)
€ 6,90
€ 6,90 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 5,70 |
| 10+ | € 3,98 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Tip pachet
H2PAK-2
Series
STH200
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
4mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
93nC
Maximum Power Dissipation Pd
340W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
