STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

Marca

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Tip pachet

H2PAK-2

Series

STH200

Montare

Surface

Numar pini

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

340W

Temperatura minima de lucru

-55°C

Forward Voltage Vf

1.2V

Temperatura maxima de lucru

175°C

Standards/Approvals

No

Automotive Standard

No