Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220
Serie
MDmesh DM2
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
25 V
Temperatura maxima de lucru
150°C
Inaltime
16.4mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6 mm
Automotive Standard
No
Detalii produs
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 6,24
€ 3,12 Buc. (Intr-un pachet de 2) (fara TVA)
€ 7,55
€ 3,775 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 6,24
€ 3,12 Buc. (Intr-un pachet de 2) (fara TVA)
€ 7,55
€ 3,775 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220
Serie
MDmesh DM2
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
25 V
Temperatura maxima de lucru
150°C
Inaltime
16.4mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6 mm
Automotive Standard
No
Detalii produs
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.


