Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220FP
Series
MDmesh
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25, -25V
Temperatura maxima de lucru
150°C
Transistor Configuration
Single
Lungime
10.4mm
Inaltime
16.4mm
Latime
4.6mm
Number of Elements per Chip
1
Detalii Produs
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Informatii despre stoc temporar indisponibile
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
P.O.A.
Each (In a Tube of 50) (fara TVA)
Informatii despre stoc temporar indisponibile
50
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220FP
Series
MDmesh
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25, -25V
Temperatura maxima de lucru
150°C
Transistor Configuration
Single
Lungime
10.4mm
Inaltime
16.4mm
Latime
4.6mm
Number of Elements per Chip
1
Detalii Produs
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.