Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Series
STD
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
70W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Lungime
6.6mm
Inaltime
2.4mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Informatii despre stoc temporar indisponibile
€ 70,00
€ 1,40 Buc. (Livrat pe rola) (fara TVA)
€ 84,70
€ 1,694 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 70,00
€ 1,40 Buc. (Livrat pe rola) (fara TVA)
€ 84,70
€ 1,694 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
50
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 50 - 245 | € 1,40 | € 7,00 |
| 250 - 495 | € 1,06 | € 5,30 |
| 500+ | € 0,93 | € 4,65 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Series
STD
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
70W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Lungime
6.6mm
Inaltime
2.4mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.