Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Series
STD
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
70W
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
UL
Latime
6.2mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Informatii despre stoc temporar indisponibile
€ 1.775,00
€ 0,71 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.147,75
€ 0,859 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.775,00
€ 0,71 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.147,75
€ 0,859 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Series
STD
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
70W
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
UL
Latime
6.2mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.