Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Series
STD
Tip pachet
TO-252
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
70W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Temperatura maxima de lucru
175°C
Standards/Approvals
UL
Latime
6.2mm
Inaltime
2.4mm
Lungime
6.6mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Informatii despre stoc temporar indisponibile
€ 1.775,00
€ 0,71 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.147,75
€ 0,859 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.775,00
€ 0,71 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.147,75
€ 0,859 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Series
STD
Tip pachet
TO-252
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
70W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Temperatura maxima de lucru
175°C
Standards/Approvals
UL
Latime
6.2mm
Inaltime
2.4mm
Lungime
6.6mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.