Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Lungime
6.6mm
Inaltime
2.17mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 2.125,00
€ 0,85 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.571,25
€ 1,028 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.125,00
€ 0,85 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.571,25
€ 1,028 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Lungime
6.6mm
Inaltime
2.17mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
