Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
60W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
2.17mm
Lungime
6.6mm
Standards/Approvals
No
Latime
6.2mm
Automotive Standard
No
Detalii Produs
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Informatii despre stoc temporar indisponibile
€ 2.125,00
€ 0,85 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.571,25
€ 1,028 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.125,00
€ 0,85 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.571,25
€ 1,028 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
60W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
2.17mm
Lungime
6.6mm
Standards/Approvals
No
Latime
6.2mm
Automotive Standard
No
Detalii Produs
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.