Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-252
Series
STripFET II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
38nC
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 23,20
€ 2,32 Buc. (Livrat pe rola) (fara TVA)
€ 28,07
€ 2,807 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 23,20
€ 2,32 Buc. (Livrat pe rola) (fara TVA)
€ 28,07
€ 2,807 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 10 - 20 | € 2,32 | € 11,60 |
| 25 - 95 | € 2,22 | € 11,10 |
| 100 - 495 | € 1,75 | € 8,75 |
| 500+ | € 1,59 | € 7,95 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-252
Series
STripFET II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
38nC
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


