Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Gate Source Voltage Vgs
20V
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
6.2mm
Inaltime
2.4mm
Lungime
6.6mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 7,00
€ 1,40 Buc. (Intr-un pachet de 5) (fara TVA)
€ 8,47
€ 1,694 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 7,00
€ 1,40 Buc. (Intr-un pachet de 5) (fara TVA)
€ 8,47
€ 1,694 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 1,40 | € 7,00 |
| 50 - 245 | € 1,21 | € 6,05 |
| 250 - 495 | € 1,07 | € 5,35 |
| 500+ | € 0,91 | € 4,55 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Gate Source Voltage Vgs
20V
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
6.2mm
Inaltime
2.4mm
Lungime
6.6mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.