Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
15.3nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Latime
6.2mm
Inaltime
2.4mm
Lungime
6.6mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 2.750,00
€ 1,10 Buc. (Pe o rola de 2500) (fara TVA)
€ 3.327,50
€ 1,331 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.750,00
€ 1,10 Buc. (Pe o rola de 2500) (fara TVA)
€ 3.327,50
€ 1,331 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
15.3nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Latime
6.2mm
Inaltime
2.4mm
Lungime
6.6mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
