Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-252
Series
MDmesh II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
2.4mm
Lungime
10.1mm
Standards/Approvals
RoHS
Latime
6.6mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 18,55
€ 3,71 Each (Supplied as a Tape) (fara TVA)
€ 22,45
€ 4,489 Each (Supplied as a Tape) (cu TVA)
Standard
5
€ 18,55
€ 3,71 Each (Supplied as a Tape) (fara TVA)
€ 22,45
€ 4,489 Each (Supplied as a Tape) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Banda |
|---|---|---|
| 5 - 45 | € 3,71 | € 18,55 |
| 50 - 120 | € 3,14 | € 15,70 |
| 125+ | € 2,44 | € 12,20 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-252
Series
MDmesh II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Inaltime
2.4mm
Lungime
10.1mm
Standards/Approvals
RoHS
Latime
6.6mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
