Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
420mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
16.5nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Latime
6.2mm
Lungime
6.6mm
Inaltime
2.17mm
Automotive Standard
No
Detalii Produs
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 2.275,00
€ 0,91 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.752,75
€ 1,101 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.275,00
€ 0,91 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.752,75
€ 1,101 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
420mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
16.5nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Latime
6.2mm
Lungime
6.6mm
Inaltime
2.17mm
Automotive Standard
No
Detalii Produs
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
