Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-252
Series
STripFET H7
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
120W
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Latime
6.2mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 3.400,00
€ 1,36 Buc. (Pe o rola de 2500) (fara TVA)
€ 4.114,00
€ 1,646 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 3.400,00
€ 1,36 Buc. (Pe o rola de 2500) (fara TVA)
€ 4.114,00
€ 1,646 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-252
Series
STripFET H7
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
120W
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Latime
6.2mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.