Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
6.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
142nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Inaltime
4.37mm
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Automotive Standard
No
Detalii Produs
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 1.180,00
€ 1,18 Buc. (Pe o rola de 1000) (fara TVA)
€ 1.427,80
€ 1,428 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 1.180,00
€ 1,18 Buc. (Pe o rola de 1000) (fara TVA)
€ 1.427,80
€ 1,428 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
6.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
142nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Inaltime
4.37mm
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Automotive Standard
No
Detalii Produs
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
