Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
75V
Series
STripFET II
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
11mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
75nC
Maximum Gate Source Voltage Vgs
-15, +15V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Frecventa minima de auto-rezonanta
-55°C
Temperatura maxima de lucru
175°C
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Inaltime
4.6mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 6,24
€ 3,12 Buc. (Intr-un pachet de 2) (fara TVA)
€ 7,55
€ 3,775 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 6,24
€ 3,12 Buc. (Intr-un pachet de 2) (fara TVA)
€ 7,55
€ 3,775 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 18 | € 3,12 | € 6,24 |
| 20 - 98 | € 2,96 | € 5,92 |
| 100 - 198 | € 2,84 | € 5,68 |
| 200+ | € 2,44 | € 4,88 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
75V
Series
STripFET II
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
11mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
75nC
Maximum Gate Source Voltage Vgs
-15, +15V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Frecventa minima de auto-rezonanta
-55°C
Temperatura maxima de lucru
175°C
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Inaltime
4.6mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.