Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Series
STripFET II
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
-20, +20V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
44.5nC
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
9.35mm
Inaltime
4.6mm
Lungime
10.4mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 63,50
€ 1,27 Buc. (Livrat pe rola) (fara TVA)
€ 76,84
€ 1,537 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 63,50
€ 1,27 Buc. (Livrat pe rola) (fara TVA)
€ 76,84
€ 1,537 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
50
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 50 - 245 | € 1,27 | € 6,35 |
| 250 - 495 | € 0,89 | € 4,45 |
| 500+ | € 0,69 | € 3,45 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Series
STripFET II
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
-20, +20V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
44.5nC
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
9.35mm
Inaltime
4.6mm
Lungime
10.4mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.